to-92mod plastic-encapsulate transistors 2SB892 transistor (pnp) feature z power s upplies, r elay d rivers, l amp d rivers, and a utomotive w iring z low s aturation v oltage. z large c urrent c apacity and w ide aso. maximum ratings* t a =25 unless otherwise noted symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -continuous -2 a p c collector dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage v(br) cbo i c = -100 a , i e =0 -60 v collector-emitter breakdown voltage v(br) ceo i c = -1ma , i b =0 -50 v emitter-base breakdown voltage v(br) ebo i e =- 100 a, i c =0 -6 v collector cut-off current i cbo v cb = -50v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -4v , i c =0 -0.1 a h fe(1) v ce =-2v, i c = -100ma 100 560 dc current gain h fe(2) v ce =-2v, i c = -1.5a 40 collector-emitter saturation voltage v ce(sat) i c = -1a, i b = -50ma -0.4 v base-emitter saturation voltage v be(sat) i c = -1a, i b = -50ma -1.2 v transition frequency f t v ce = -10 v, i c = -50ma 150 mhz classification of h fe(1) rank r s t u range 100-200 140-280 200-400 280-560 to-92mod 1. emitter 2. collector 3. base 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jun,2013
-1 -10 -100 -1000 -10 -100 -200 -400 -600 -800 -1000 -1200 -1 -10 -100 -1000 -1 -10 -100 -1000 10 100 1000 -1 -10 -100 -1000 -200 -400 -600 -800 -1000 -1200 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -0.1 -1 -10 10 100 1000 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -50 -100 -150 -100 10 100 1000 -400 f t ?? i c ?? h fe ?? -2000 t a =100 t a =25 =20 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) -2000 t a =25 t a =100 common emitter v ce =-2v collcetor current i c (ma) base-emmiter voltage v be (mv) common emitter v ce =-2v t a =25 t a =100 i c dc current gain h fe collector current i c (ma) -2000 i c v be -2000 =20 t a =100 t a =25 i c v besat ?? base-emitter saturation voltage v besat (mv) collector current i c (ma) collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a c ob c ib f=1mhz i e =0 / i c =0 t a =25 capacitance c (pf) reverse voltage v (v) -20 v cb / v eb c ob / c ib ?? static characteristic -0.50ma -0.45ma -0.40ma -0.35ma -0.30ma -0.25ma -0.20ma -0.15ma -0.10ma common emitter t a =25 i b =-0.05ma collector current i c (ma) collector-emitter voltage v ce (v) 2SB892 common emitter v ce =-10v t a =25 transition frequency f t (mhz) collector current i c (ma) -10 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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